Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
Fast and reliable detection of light. In APD modules the driver for operating the avalanche photodiodes is already included.
APD modules enable very low light levels to be detected quickly and simply in a variety of applications such as laser radar, rangefinding, data transfer or biomedical analysis.
The APD modules are based on low-noise avalanche photodiodes made of either silicon or InGaAs with a built-in pre-amplifier and high voltage supply. A temperature compensation function allows the APD to be operated at constant gain across a wide operating temperature range.
The InGaAs APD has an active area of 200µm in diameter and is ideal for measurements in the wavelength range from 1000 nm to 1650 nm.
The silicon versions are designed for the range 400 nm to 1100 nm and are available with active areas of 500mm or 1.5mm. Both silicon and InGaAs versions have operating bandwidths from DC to 25MHz.
The module combines all of the necessary components in a single, compact, shielded housing (ca. 75 x 56 x 26 mm), so that only a standard 12V DC supply is needed for plug-and-play operation.
OEM and custom versions are available on request.