Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
APD-arrays are now available from Laser Components, enabling new applications in LIDAR and ACC.
Typically used in Time-of-Flight (TOF) sensors for distance measurement, for example in automotive safety sensing applications, linear APD arrays are now available from Laser Components.
Combining low-noise, high-silicon avalanche photodiodes in a monolithic assembly, the arrays have been optimized for the 800-900 nm wavelength range. Further features include a low temperature coefficient and a gap of only 40 µm between elements. The arrays can be configured to fit the customer’s requirement in terms of the number and size of the array elements. A 12-element array in a 14-pin DIL package is also available as standard (datasheet available). 2D matrix arrays are currently under development.