SiC-Detectors (200 - 400 nm)
Compared to Si-, TiO2-, GaN-, or diamond-based components, our SiC UV photodiodes have advantages that cannot be beat.
UV Photodiodes
SiC diodes include, for example, solar blind UV photodiodes, which are preferably used in lamp monitoring. They have the following features:
- The spectral sensitivity only covers a range of 200 – 400 nm blocking longer wavelengths is therefore unnecessary
- The detectors are extremely stable for long periods of time (even when exposed to high doses of UV radiation of up to 1000 W/m²)
- Extreme stability at high temperatures
Temperature coefficient of Tk < -0.06%/K. Permanent operating temperatures of up to +150 °C
- The dark current level is in the fA-range and therefore very narrow.
- The spectral sensitivity can be customized using space-approved filter technology for UV-A, UV-B, UV-C, UV-BC, and UV-BC2.
- Integrated signal processing and evaluation electronics available
High Temperature Applications
The standard model of our SiC diodes is designed to operate at temperatures of up to + 70 °C.
For certain applications, such as flame detection, this is not enough. The HT-models (HT stands for high temperature) offer a remedy in such a case. They can operate at up to + 150 °C.
Three different versions are available:
JEC 0.1 SHT, JEC 0.3 SHT, and JEC 1 SHT with an active area of nominal 0.1 – 1 mm2 and sensitivities from 0.13 to 0.15 A/W.
SiC Detectors with Filters
SiC photodiodes with integrated, radiation-resistant filters are available for use in special applications. In addition to UV-C, UV-BC, UV-BC2, and UV-A filters, diodes with erythemal weighting are also available. The sensitivity of the sensor in erythemal detectors is adapted to match the sensitivity of the human skin. The sensitivity curve corresponds approximately to the CIE 87 erythemal curve.
SiC UV Photodiodes with Build-in Preamplifier
The SiC UV photodiodese with build-in preamplifier is available with a flat cap or a lens cap.
