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Laser Components (UK) Ltd.
Goldlay House,
114 Parkway,
Chelmsford Essex CM2 7PR
United Kingdom
Phone: +44 1245 491 499
E-Mail:info@lasercomponents.co.uk

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UV Photodiodes

UV photodiodes are produced from the material SiC. Detection of radiation occurs in the wavelength range from 200 nm to 400 nm. Detectors are available with filters that are exclusively sensitive in the UV-C, UV-B, or UV-A ranges.

SiC Photodiodes (200 - 400 nm)

SIC Photodiode

SiC diodes are stable UV photodiodes with many advantages for this spectral range.

SiC diodes include solar blind UV photodiodes, which are preferably used to monitor UV sources, such as UVC LEDs or lamps.

They are characterized by the following properties:

  • Typical spectral sensitivity between 200 nm and 355 nm
  • Special chip structure for extended sensitivity up to 400 nm
  • Various sizes from 0.1 mm² to 5 mm²
  • Excellent long-term stability – even at high UVC radiation doses up to 1000 W/m²
  • Extreme temperature stability (continuous use up to +250°C)
  • Adaptation of spectral sensitivity using filters (UVA, UVB, UVC, and others)
  • Extremely low dark current level in the fA range
  • Sensor isolated from housing
  • Hermetic TO housing
  • RoHS, REACH, and WEEE compliance

The standard model of our SiC diodes is designed to operate at temperatures of up to +150°C.

For certain applications, such as flame detection, we offer UT-models (UT stands for Ultra-high Temperature) that operate at up to +250°C.

 

 

For special applications, SiC photodiodes are available with integrated radiation-resistant filters ( e.g. UVC, UVB, UVA, or combined ranges).

SiC UV photodiodes are available with a flat cap or with a lens cap.

Photodiodes only generate very low currents - often in the range of a few nanoamperes. Transimpedance amplifiers are used to amplify these photocurrents and convert them into voltage so that they can be evaluated or used for the intended applications.

Your contact person

Edward Williams

+44 1245 491499