IR-Detectors 1-40µm

InAs 1 - 4 µm
Contrary to the photoconductive detector materials often used in this wavelength range (PbS, PbSe, and HgCdTe), InAs is photovoltaic and does not require an operating voltage.


InSb 1 - 5.5 µm
InSb detectors are photovoltaic elements that produce a current due to the incident IR radiation. InSb detectors are cryogenically cooled.


HgCdTe (photovoltaic) 1 - 5.5 µm
The application field is equal to InSb, but without LN2 cooling. The typical 1/f noise does not occur with PV MCT detectors and are therefore ideally suited for distributed current and low frequency a


HgCdTe (photoconductive) 2 - 26 µm
HgCdTe is a ternary semiconductor material. Its composition determines the cut-off wavelength.


PbS 1 - 3,3 µm
Polycrystalline PbS is a traditional IR detector of high quality. PbS acts as a photoresistor.


PbSe 1 - 5 µm
Polycrystalline PbS is a standard semiconductor detector. During a product range overhaul in 2000, the properties were significantly improved.


One-dimensional IR Arrays
With this new detector Cal-Sensors offers the NIR spectroscopy user a powerful array with attractive conditions.