LASER COMPONENTS DG, Inc. has manufactured silicon avalanche photodiodes in Tempe, Arizona (near Phoenix), since 2004. The detectors are based on a semiconductor structure that has been specifically developed for us
Avalanche PhotodiodesLASER COMPONENTS DG, Inc.
The Perfect Avalanche - Test it!
Detection of light is our business. We are doing it through different detectors structures, made from different materials and capable of detecting light of intensity as a low as a single photon or in the wavelength range way beyond the sensitivity of human eye.
LASER COMPONENTS DG, Inc. manufactures avalanche photodiodes in Phoenix, Arizona, since 2004. The complete production chain is in our hands. The detectors are based on a specifically developed semiconductor structure. The standard program comprises Si-Epitaxy and Reach-Through APDs with active area diameters from 230 µm to 3.0 mm.
The Si-Avalanche Photodiodes from our in-house production are well suited for the recognition of even the smallest amount of light, right down to single photons. Main applications are photon counting, laser radar systems and biomedical applications. For the NIR range InGaAs-APDs with a diameter of 80 µm and 200 µm are manufactured.