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Panchromatic InGaAs or Silicon?

Photonics News 34

Which Material for Your Detector?


US34-037

At longer wavelengths panchromatic ­InGaAs has a higher temperature stability than silicon and is thus a viable alternative in laser applications at approximately 1,000 nm.

The sensitivity range of our new InGaAs PIN diodes – IG17, IG22, and IG26 – not only covers the SWIR spectral range but the visible range as well. This characteristic is referred to as “panchromatic”. An example of IG22 is shown in Fig. 1.

In a measurement application, this signal should depend on disturbance factors as little as possible in order to be as independent of the environmental temperature as possible. With silicon, this property exists in wavelengths that are less than 900 nm; the temperature coefficient of the sensitivity is constant at <0.1%/K and can be corrected using software.

The longer the wavelengths are, the faster this dependency increases and the more difficult it becomes to make a software correction.

This effect is particularly disturbing in laser ­applications at approximately 1,000 nm. Here InGaAs presents a viable alternative to silicon.

The signal loss is marginal. The IG17 series components exhibit a constant temperature coefficient of <0.1%/K at 1,000 nm. According to the tests we ran, the IG22 series is, at a value of approximately 0.002%/K, even more temperature independent and should thus definitely be considered for use. Fig. 2 shows the corresponding spectral behavior of the temperature coefficient.


Datasheet:

Further product information:
InGaAs 500 - 2600 nm

Manufacturer:
LASER COMPONENTS Detector Group

Contact:

Contact Person:    Paul Buettner
Company:    LASER COMPONENTS USA Inc.
Address:    116 South River Road Building C
ZIP / City:    03110 Bedford, NH
Phone:    +1 603 821 7040
Fax:    +1 603 821 7041
Email:    photodiode@laser-components.com
 

Panchromatic photodiode IG22 - spectral response

IG22 responsivity percent change in relation to the temperature

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