Si PIN Photodiodes. Si photodiodes are reverse-biased PIN diodes. They detect light in a range from 250 nm to 1.1 µm. The incident radiation results in a measurable photocurrent.
Photodiodes for the near infrared range (NIR) are produced from InGaAs semiconductor material. They can detect radiation in the range between 900 and 1700 nm. Customer-specific designs are available.
Präzise Messtechnik mit einfachem Aufbau.