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Laser Components USA, Inc.
116 South River Road
Building C
Bedford, NH 03110
USA
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Si APDs

Silicon avalanche photodiodes are used in the wavelength range between 260 nm and 1100 nm. The avalanche effect of these photodiodes makes them well suited for the detection of extremely weak light intensities.

Avalanche Photodiodes at 1064 nm

Nd:YAG Enhanced APDs

The new SAT family is targeted for the 1.06 micron detection region. They achieve 2 - 3 times the efficiency of standard APDs at 1064 nm (>38%), have a low dark current and optimum capacitance for low noise applications. The product is available with 800 µm and 3000 µm active areas and in many different packaging configurations including TEC, fiber receptacle and fiber pigtail variants.

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Your contact person

Paul Buettner
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+1 603 821 7040

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News »
21.06.2023

Cost-efficient InGaAs APDs

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