UV photodiodes are produced from the material SiC. Detection of radiation occurs in the wavelength range from 200 nm to 400 nm. Detectors are available with filters that are exclusively sensitive in the UV-C, UV-B, or UV-A ranges.
Compared to Si-, TiO2-, GaN-, or diamond-based components, our SiC UV photodiodes have advantages that cannot be beat.
SiC diodes include, for example, solar blind UV photodiodes, which are preferably used in lamp monitoring. They have the following features:
Temperature coefficient of Tk < -0.06%/K. Permanent operating temperatures of up to +150 °C
High Temperature Applications
The standard model of our SiC diodes is designed to operate at temperatures of up to + 70 °C.
For certain applications, such as flame detection, this is not enough. The HT-models (HT stands for high temperature) offer a remedy in such a case. They can operate at up to + 150 °C.
SiC Detectors with Filters
SiC photodiodes for UV-C, UV-BC, UV-B and UV-A with integrated, radiation-resistant filters are available for use in special applications.
SiC UV Photodiodes with Build-in Preamplifier
The SiC UV photodiodese with build-in preamplifier is available with a flat cap or a lens cap.