IR detectors have been a part of our standard product range at LASER COMPONENTS for almost three decades. A distinction is made between sensors for the near infrared range (NIR) from 1.0 µm to 2.5 µm and those for the mid-infrared range (MIR) above 2.5 µm. IR detectors of all modes of operation are a part of our product portfolio and leave nothing to be desired.
The new InGaAs PIN photodiodes are panchromatic. A regular sensitivity range is 500 nm to 1700 nm for extended InGaAs photodiodes. This range extends to 2600 nm.
InAs photodiodes are a spectral addition to extended InGaAs photodiodes and are used in the wavelength range from 900 nm to 3500 nm.
Detectors made of lead sulfide (PbS) and lead selenide (PbSe) function as photoresistors that detect radiation in the infrared (IR) spectral range. As a special feature, large surface area detectors up to 10 x 10 mm are available for delivery.
Powerful IR arrays were developed for applications in NIR spectroscopy. Arrays made of InGaAs and extended InGaAs are available.