LASER COMPONENTS DG, Inc. manufactures avalanche photodiodes in Phoenix, Arizona, since 2004. The complete production chain is in our hands. The detectors are based on a specifically developed semiconductor structure. The standard program comprises Si-Epitaxy and Reach-Through APDs with active area diameters from 230 µm to 3.0 mm.
The Si-Avalanche Photodiodes from our in-house production are well suited for the recognition of even the smallest amount of light, right down to single photons. Main applications are photon counting, laser radar systems and biomedical applications. For the NIR range InGaAs-APDs with a diameter of 80 µm and 200 µm are manufactured.
|All products of this manufacturer|
|PbS and PbSe Detectors|
|InGaAs APD 1100 - 1700 nm|
|InGaAs PIN Photodiodes|