Laser Components (UK) Ltd.
Goldlay House,
114 Parkway,
Chelmsford Essex CM2 7PR
United Kingdom
Phone: +44 1245 491 499


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InGaAs PIN Photodiodes

Modern InGaAs PIN photodiodes are panchromatic and convert broadband light to photocurrents in the Vis-NIR range. Concretely speaking, this means a sensitivity range from 500 nm to 1700 nm for regular InGaAs and – in increments – up to 2600 nm for extended InGaAs. Variations for data transmission are not panchromatic.

InGaAs 500 - 2600 nm

IR photodiodes with an emphasis on quantum efficiency: LASER COMPONENTS develops and manufactures photodiodes in the spectral range of up to 2600 nm.

InGaAs PIN Photodiodes

The IG22 and IG26 series were developed with an emphasis on quantum efficiency. As well as our original IG17 (up to 1700 nm), IG22 (up to 2200 nm) and IG26 (up to 2600 nm) series we have a selection of supplementary detectors for specific wavelength peaks; our IG19 (up to 1900 nm) and IG24 (up to 2400 nm) series.

Main Applications for IR Photodiodes:

  • Spectroscopy (and NIR-FTIR in particular)
  • Laser monitoring
  • Non-contact temperature measurement
  • Tunable diode laser spectroscopy (TDLS)
  • Spectrophotometry, e.g. for measuring moisture
  • Sorting applications
  • Flame regulation

Key Features Include the Following:

  • Peak sensitivities from 1.05 A/W to 1.45 A/W
  • High dynamic range
  • High linearity
  • Low temperature coefficient of the sensitivity of up to 0.01%/K
  • Panchromatic, i.e. sensitive in the Vis and NIR ranges

LASER COMPONENTS produces photodiodes in house at our production facility in Tempe, Arizona. They have been available on the market since 2013 and offer a strong cost-performance ratio.

The following series are available:

  • IG17 series (500-1700 nm)
  • IG19 series (500-1900 nm)
  • IG22 series (500-2200 nm)
  • IG24 series (500-2400 nm)
  • IG26 series (500-2600 nm)

This product portfolio was designed with great attention to detail: One of our most obvious features is the panchromatic nature of all of our InGaAs photodiodes, providing detection down to 500 nm. Further advantages include a lower temperature coefficient and a reduced off-area sensitivity.  

Active diameters from 0.25 mm to 3 mm are available as standard, and are available in hermetically-sealed TO housings with or without an integrated Peltier cooler, as an SMD, on a ceramic mount, or simply as a chip.

In addition to the industry standard sizes of 1 mm and 2 mm, we also have an in-between active area size available: 1.3 mm. This makes it possible to package the photodiode in a TO-46 housing (with a base diameter of 5.3 mm), delivering 70% more signal in  the same housing dimensions compared to a photodiode with an active area of 1 mm.

Customer-specific designs are possible, such as hermetic integration of interference filters.Laser Components’ InGaAs photodiodes are also available as digital sensor modules dubbed the MAJOR Series.

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Your contact person

Dr. Tony Hornby

+44 1245 491499