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Laser Components USA, Inc.
116 South River Road
Building C
Bedford, NH 03110
USA
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Avalanche Photodiodes

Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.

Silicon APD Arrays

APD Array

APD-arrays are now available from LASER COMPONENTS, enabling new applications in LIDAR and ACC.

Typically used in Time-of-Flight (TOF) sensors for distance measurement, for example in automotive safety sensing applications, linear APD arrays are now available from Laser Components.

Combining low-noise, high-sensitivity silicon avalanche photodiodes in a monolithic assembly, the arrays have been optimized for the 800-900 nm wavelength range. Further features include a low temperature coefficient and a gap of only 40 µm between elements. The arrays can be configured to fit the customer’s requirement in terms of the number and size of the array elements. 8-, 12- or 16-element arrays in a 14-pin DIL package are also available as standard (datasheets available). 2D matrix arrays are currently under development.

Your contact person

Paul Buettner
Use our request form*

+1 603 821 7040

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external website created by Laser Components USA.

News »
21.06.2023

Cost-efficient InGaAs APDs

LASER COMPONENTS expands its r...