PIN photodiodes convert light to current – without a bias voltage having to be applied. Silicon is commonly used as an inexpensive detector material in the Vis range. For higher demands, InGaAs is used; it covers the widest spectral range from the Vis to the NIR. We offer silicon carbide as a “solar-blind” detector specifically for the UV range.
Modern InGaAs PIN photodiodes are panchromatic. The regular sensitivity range is 500 nm to 1700 nm; for extended InGaAs diodes, this range extends to 2600 nm.
Si PIN Photodiodes. Si photodiodes are reverse-biased PIN diodes. They detect light in a range from 250 nm to 1.1 µm. The incident radiation results in a measurable photocurrent.
UV photodiodes are produced from the material SiC. Detection of radiation occurs in the range from 200 nm to 400 nm. Detectors are available with filters that are sensitive in the UV-C, UV-B, or UV-A.
Germanium is designed for use from 800 to 1800 nm. These photodiodes are an inexpensive alternative to InGaAs photodiodes, in particular for large active surface areas.