High-resistance power diodes are used in intensity measurements and as detectors in optical fibers. They are less expensive than APDs, but are also less sensitive.
Si PIN Photodiodes. Si photodiodes are reverse-biased PIN diodes. They detect light in a range from 250 nm to 1.1 µm. The incident radiation results in a measurable photocurrent.
Photodiodes for the near infrared range (NIR) are produced from InGaAs semiconductor material. They can detect radiation in the range between 900 and 1700 nm. Customer-specific designs are available.
UV photodiodes are produced from the material SiC. Detection of radiation occurs in the range from 200 nm to 400 nm. Detectors are available with filters that are sensitive in the UV-C, UV-B, or UV-A.
Germanium is designed for use from 800 to 1800 nm. These photodiodes are an inexpensive alternative to InGaAs photodiodes, in particular for large active surface areas.