Avalanche Photodiodes
Made in the USA
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LASER COMPONENTS Detector Group in Tempe, Arizona has developed and commercialized multiple families of Avalanche Photodiodes (APDs). The design families cover wavelengths from 400 nm to 1600 nm. All of the APD series are manufactured in the US.
The SAE series is an epitaxial silicon APD that has high responsivity and very fast rise and fall times optimized at 905 nm or 650 nm. This APD is available in 230 and 500 micron active areas in a variety of packages.
The SAR, SARP and SARF series are ‘reach-through’ silicon APDs that have excellent quantum efficiency and high speed. The SARP series has very low noise and dark current making it an ideal solution of low light level applications. The SARF design integrates a 905 nm bandpass filter applied directly to the window cap. These APDs are available with a 500 micron active area in a variety of packages.
The SAT series silicon APD has been especially designed to provide the highest quantum efficiency at 1064 nm (40%) as well as low dark current and capacitance for optimum low noise operation.
The design also incorporates band pass protection from high radiation reflections. These APDs are available in 800 micron and 3 mm active areas in a variety of packages.
The IAE series are InGaAs APDs have excellent responsivity and rise and fall times from 1000 to 1650 nm wavelength region. This APD series is available in 80 and 200 micron active areas in a variety of packages.
We are continually investing in improving our products. Please be sure to check with LASER COMPONENTS for your specific requirements.
Datasheet:
Manufacturer:
LASER COMPONENTS Detector Group
Contact:
Contact Person: | Matt Robinson |
Company: | LASER COMPONENTS USA Inc. |
Address: | 116 South River Road Building C |
ZIP / City: | 03110 Bedford, NH |
Phone: | +1 603 821 7040 |
Fax: | +1 603 821 7041 |
Email: | sales@laser-components.com |
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