InGaAs PIN Photodiodes
Photodiodes for the near infrared range (NIR) are produced from InGaAs semiconductor material. They can detect incident radiation in the wavelength range between 900 and 1700 nm. Customer-specific designs are available from 500 nm to 1700 nm.
Our InGaAs components are characterized by a high sensitivity between 900 nm and 1700 nm.
The J23-series detectors are high quality InGaAs photodiodes with a wavelength range from 800 to 2600 nm.
1100 nm – 1700 nm. Broad range of InGaAs PIN receivers with fiber connection or optical connector.
IAE series InGaAs avalanche photodiodes detect in the spectral range from 1100 nm to 1700 nm. IAG series APDs exhibit particularly high damage threshold values. Both come packaged in a TO-46 housing.