Since the foundation of LASER COMPONENTS Detector Group, Inc. in 2004 we have built a product range comprising high quality APDs as well as low cost versions. The active area of our Silicon Avalanche Photodiodes ranges from diameters of 230 µm to 3.0 mm.
Applications. Depending on type and specifications APDs are used for rangefinding, speed measurements, laser radar, security scanners, spectroscopy, fluorescence measurement as well as test and measurements systems in industrial, military, and medical markets. The avalanche effect is most effective whenever there is not much light available.
Housing Options. The APDs are available in different TO-housings with certain options such as lens cap, integrated filter, with TEC, SMD housing, or just on ceramic submount. In addition to a wide range of standard products our strength clearly is in customer specific developments.
Fiber-coupled versions available. All APDs in a TO-46 housing are available fiber coupled on an optional basis.
Series
Si Avalanche Photodiodes
Si Avalanche Photodiodes - SAE Series
Inexpensive APDs feature a very large gain and dynamic range.
SAE SEries
The SAE series features an epitaxial structure and is available as red enhanced (i.e. optimized for visible wavelengths) or NIR enhanced (i.e. optimized for NIR wavelengths) version. These APDs are inexpensive and feature a very large gain and dynamic range.
Si Avalanche Photodiodes - SAHA Series
Low cost APDs in a miniature SMD packages. Responsitivity is optimized for 850 nm and 905 nm rangefinders. Optional, the SAHA series is also available with 905 nm bandpass filter.
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Benefits
- made for high-volume range finders
- bandpass filter increases detection rate
Features
- optimized for 850 nm and 950 nm
- optional bandpass filter
Datasheets
Si Avalanche Photodiodes - SAR Series
These APDs feature extremely low noise and low dark current.
Si Avalanche Photodiodes - SAR Series
The SAR series is based on a reach-through structure with a high sensitivity across the entire spectral range from 400 nm to 1100 nm. At the same time, rise and fall times are extremely fast (typically 450 ps). These APDs feature extremely low noise low dark current.
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Benefits
- fast and reliable detection results for maximum precision
Features
- extremely low noise dark current
- sensitivity from 400 nm to 1100 nm
- rise and fall time typ. 450 pcs
Si Avalanche Photodiodes - SARP SEries
Specifically selected APDs can be used for photon counting in Geiger mode (VR > VBR), where a single photon triggers an avalanche impulse of approximately 108 charge carriers.
This APD is particularly suited for spectroscopy, fluorescence measurement, medical technology, and high end LiDAR applications.
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Si Avalanche Photodiodes - SARF Series
One of the most common applications of Si-APDs is rangefinding systems based on the time-of-flight method (LIDAR).
In the time-of-flight method, a 905 nm pulsed laser diode emits a laser pulse that reflects off an object and is focussed through an optic onto an APD chip. In order to achieve an optimal signal-to-noise ratio, an external band-pass filter that blocks the surrounding light has to be mounted in front of the APD or the optic.
In the SARF series, this filter comes already integrated into the TO housing.
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Benefits
- Integrated bandpass filter for easy integration
- Focusing guarantees best detection quality
Features
- optional: 905 nm filter integrated into TO-housing
Datasheets
Information
about Avalanche Photodiodes
Semiconductor Materials
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities.
Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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Choosing the Right Material for Laser Range Finding
+ Silicon for consumer range finders. Choosing the right APD material is key, if you are looking for the best performance for laser range finding applications.
The detector material of the APD has great influence on range measurement reliability. Depending on the demands for maximal range, resolution and eye-saftey, designers have the choice between III-V compounds such as InGaAs- or Silicon-based APDs - both with their distinctive set of advantages and disadvantages.
For laser rangefinding, a 905 nm pulsed laser diode fits best.
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Single emitters, stacks and multi-junction pulsed laser diodes up to 650 W
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LASER COMPONENTS USA - Your competent partner for optical and optoelectronic components in the United States.
Welcome to LASER COMPONENTS USA, Inc., your expert for photonics components. Each product in our wide range of detectors, laser diodes, laser modules, optics, and more is worth every Dollar ($/USD). Our customized solutions cover all conceivable areas of application: from sensor technology to medical technology. You can reach us here:
116 South River Road
Building C
Bedford, NH 03110
USA
Phone: +1 603 821 7040
Email: info(at)