Dual-mode high gain low-noise InGaAs avalanche photodiode based on p-i-n photodetector design

We present the design and detailed characterization of a dual-mode low-noise InGaAs photodetector which is capable of operating as a p-i-n photodetector at 0V bias (with a gain of 1) and as an avalanche photodiode (APD) with a gain of 10 at 5V under breakdown voltage of 55V. At Gain 1 the detector has 0.94 A/W responsivity and at Gain 10 the detector has 9.4 A/W responsivity. In the Avalanche operation mode, the detector can achieve high Signal to Noise ratio at Gain 30 at 2 Volts under breakdown voltage.