Dual-mode high gain low-noise InGaAs avalanche photodiode based on p-i-n photodetector design
Arshey Patadia
Product Manager
LASER COMPONENTS Detector Group
Title of Presentation:
Design and characterization of a dual-mode high gain low-noise InGaAs avalanche photodiode based on p-i-n photodetector design
28 January 2025 • 10:25 AM - 10:45 AM PST
Oral Presentation
Moscone West, Room 2012 (Level 2)
Abstract - Avalanche Photodiodes InGaAs
We present the design and detailed characterization of a dual-mode low-noise InGaAs photodetector which is capable of operating as a p-i-n photodetector at 0V bias (with a gain of 1) and as an avalanche photodiode (APD) with a gain of 10 at 5V under breakdown voltage of 55V. At Gain 1 the detector has 0.94 A/W responsivity and at Gain 10 the detector has 9.4 A/W responsivity. In the Avalanche operation mode, the detector can achieve high Signal to Noise ratio at Gain 30 at 2 Volts under breakdown voltage.
IR Detectors
manufactured by LASER COMPONENTS
Infrared (IR) photodiodes with an emphasis on quantum efficiency
The IA35 series photodiodes based on heterostructures were specially designed for operation at room temperature.
These photodiodes offer a particularly high quantum efficiency of typically 99.5%. They are mainly used in research institutions.
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