Avalanche Photodiodes
Si APDs are suitable for the spectral range from 260 nm to 1100 nm.
Nd:YAG Enhanced APDs
APD with excellent quantum efficiency made for photon counting.
These APDs have a high sensitivity in the DUV/UV wavelength range.
APD-arrays are now available from LASER COMPONENTS, enabling new applications in LIDAR and ACC.
1100 - 1700 nm
Best efficiency thanks to excellent signal-to-noise ratio.
APDs with matched, integrated pre-amplifier in compact hermetic packages.
Fast and reliable detection of light. In APD modules the driver for operating the avalanche photodiodes is already included.
With the inexpensive block modules from LASER COMPONENTS it is very easy to supply voltages up to several 1,000 V.
Information
about Avalanche Photodiodes
Semiconductor Materials
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities.
Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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