Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
Silicon avalanche photodiodes are used in the wavelength range between 250 nm and 1100 nm. The avalanche effect makes them well suited for the detection of extremely weak light intensities.
InGaAs avalanche photodiodes are used to detect light in the spectral range from 1100 nm to 1700 nm. They exhibit significantly lower noise properties than germanium diodes.
Fast and reliable detection of light. In APD modules the driver for operating the avalanche photodiodes is already included.
LiDAR applications, surveillance systems or 3D imaging require sensors with particularly high-resolution. CMOS SPADs offer high count rates with low background noise.