Avalanche Photodiodes
Si APDs are suitable for the spectral range from 260 nm to 1100 nm.
Nd:YAG Enhanced APDs
APD with excellent quantum efficiency made for photon counting.
These APDs have a high sensitivity in the DUV/UV wavelength range.
APD-arrays are now available from LASER COMPONENTS, enabling new applications in LIDAR and ACC.
1100 - 1700 nm
Best efficiency thanks to excellent signal-to-noise ratio.
APDs with matched, integrated pre-amplifier in compact hermetic packages.
Fast and reliable detection of light. In APD modules the driver for operating the avalanche photodiodes is already included.
With the inexpensive block modules from LASER COMPONENTS it is very easy to supply voltages up to several 1,000 V.
General Information
about Avalanche Photodiodes
Like photomultipliers, avalanche photodiodes (APDs) are used to detect extremely weak light intensities. Silicon (Si) APDs are used in the wavelength range from UV to NIR (250 nm to 1100 nm), and indium gallium arsenide (InGaAs) is used as semiconductor material in APDs for the NIR wavelength range from 1100 nm to 1700 nm.
All APDs developed by LASER COMPONENTS are manufactured at the production facility in Arizona. To meet the needs of each customer, components can be offered with modifications and customizations. Even before a purchase order is placed, product experts can offer guidance in the decision-making process.
Certified Manufacturing
All Si & InGaAs APD wafers are produced in a Class 100 clean room. Packaging is done within a Class 10,000 clean room. For customers in the automotive industry, many components have been developed to meet the AEC-Q102 qualification. Additionally, products are developed with MIL-STD for high-reliability defense and aerospace applications.
Silicon APDs
LASER COMPONENTS has a large portfolio of Si APD products, that are customized to support high Quantum Efficiencies (QE) at wavelengths of 250 nm, 405 nm, 670 nm, 700 nm, 905 nm, 1050 nm, and 1064 nm (the SAT series is typical for YAG applications). These ultra-sensitive detectors can capture even the smallest amounts of light, ideal for single photon counting (SAP series and Count Modules). Si APDs are typically offered with active area diameters ranging from 230 µm to 3000 µm.
InGaAs APDs
For the infrared (IR) range, LASER COMPONENTS offers two variants of InGaAs APDs with the active area diameters ranging from 80 um to 500 um. These APDs are ideal for applications that require industrial durability, low capacitance, low dark current, high dynamic operational range and detectivity across a spectral range of 800 nm to 1700 nm. They have a high quantum efficiency at 1310 nm, 1480 nm, 1550 nm. and 1625 nm that allow these avalanche photodiodes to operate with low noise even at higher gains and high bandwidth without neglecting lower wavelengths. These detectors demonstrate high signal-to-noise ratio (SNR) even when operating at gain 30.
APD Receivers
Featuring a large frequency bandwidth and support for many wavelengths, APD Receivers operate in 400 nm to 1100 nm and 1000 nm to 1650 nm for Silicon and InGaAs APDs respectively. LASER COMPONENTS offers the H1-Series for low noise with a built-in temperature sensor supporting bandwidths up to 30 MHz. The H2-H5-Series work for even faster applications, with bandwidth up to 700 MHz.
APD Selection Guide
Depending on the material of a detector the range and reliability can drastically differ for various applications. Read the LASER COMPONENTS APD Selection Guide to understand where Si and InGaAs APDs each fit.
Get The Perfect Couple with Matching PLDs
LASER COMPONENTS can be your one stop for all your emitter and detector products as a manufacturer of both pulsed laser diodes (PLDs) and photodiodes. PLDs are offered with custom band-pass filters to match the needs of different industries.
Fields of Applications
- Laser rangefinding
- LiDAR
- Spectroscopy & Fluorescence
- Defense & Military
- Automotive industry
- Astronomical
- Biomedical technology
- Optical communications
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Custom Solutions
Avalanche Photodiodes customized to your needs
Tailored to solve unique Challenges
Through close collaboration during new product development, the engineering experts at LASER COMPONENTS Detector Group, can ensure customers receive an effective solution for their application. Customers can rely on quick response times with support from the beginning of the engineering consultation, to quoting process, manufacturing of components, testing samples, and well after development.
Full In-House Manufacturing
LASER COMPONENTS Detector Group has wafer fabrication capabilities, such as epitaxial growth, high temperature diffusion, plasma etching, photolithography, and plasma deposition. During the design process LASER COMPONENTS’ product experts will help determine the best options to offer during the component selection process. Offering transistor outline (TO), surface mount device (SMD), dual flat no leads (DFN), dual inline (DIL), and leadless chip carrier (LCC) packages, and change the optical window to various other options, the final product manufactured can be personalized for each customer.
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LASER COMPONENTS France - Your competent partner for optical and optoelectronic components in France.
Welcome to LASER COMPONENTS S.A.S., your expert for photonics components. Each product in our wide range of detectors, laser diodes, laser modules, optics, fiber optics, and more is worth every Euro (€/EUR). Our customized solutions cover all conceivable areas of application: from sensor technology to medical technology. You can reach us here:
45 Bis Route des Gardes
92190 Meudon
France
Phone: +33 (0) 139 595 225
Email: serviceclient(at)