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82140 Olching / Germany

Phone: +49 (0)8142 / 28 64-0
Fax: +49 (0)8142 / 28 64-11

E-Mail: info@lasercomponents.com

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Pulsed Laser Diodes

Pulsed laser diodes (PLDs) are available in the wavelengths 850 nm, 905 nm and 1550 nm. All of our PLDs are developed and manufactured at our Laser Components production facility in Canada. Customer-specific requests can, therefore, easily be accommodated.

For military rangefinders

Pulsed Laser Diodes at 1550 nm

Pulsed laser diodes at 1550 nm up to 40 W

Pulsed Laser Diodes

Rangefinder systems that are built with 1550 nm pulsed laser diodes (PLDs) also operate at high power levels yet still in the eye-safe range – due to their wavelength. Common night-vision goggles cannot detect this wavelength, which makes these PLDs particularly well suited for military laser rangefinders or friend/foe identification.

The base material of the 1550 series is InP with additional InGaAsP layers. The InGaAsP structure ensures high reliability, very good beam characteristics, and a high temperature stability. The wide operating temperature range is between –45°C and +85°C. The 1550 nm pulsed laser diodes are housed in a TO-18 can. They are also available in 9 mm packages or in customer-specific designs.

155G Series:
The stack design of standard diodes yields an output power of about 15-20% above the market average.

Additional characteristics:

  • Efficiency: 0.35 W/A
  • Peak power: at least 45 W at a pulse length of 150 ns
  • Beam divergence: an excellent 12° x 30°
  • Output power of a single emitter: 3 W to 12 W
  • Output power of stacked emitters: 10 W and 45 W

HI Series:
Even as a single emitter, high intensity PLDs with an efficiency of 0.5 W/A yield a peak power of 35 W at a beam divergence of only 12° x 25°.

Multi-junction PLDs:
Multi-junction laser technology is similar to nanostack technology. One laser diode chip contains several epitactically integrated emitters. The 155G1S2J02x produces an output power of 5 W (@ 150 ns, df= 0.1%) at a strip size of only 50 µm x 7 µm with two emitters. At shorter pulse lengths the optical peak power can be overdriven accordingly.

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The Divergence of the fast axis was optimized by the additional assembly of a fast axis collimation (FAC) lens that is attached directly in front of the laser diode chip. Depending on the lens used, divergences of 10 mrad can be achieved. The integration of both the chip and the lens in a small, hermetically sealed TO-46 housing is particularly advantageous. This design withstands acceleration rates of over 1000 g/ms without a problem, as is required for use in military technology.

This technology is also optionally available with 905 nm pulsed laser diodes. If the wavelength has to be controlled exactly, a thermoelectric cooler (TEC) can be integrated into a TO-8 housing.

Part Number / Datasheet Wavelength Power Package
>> HI155G1S02FP-62/27-F-0-01 1550 nm
4.2 W Pigtail or Receptacle
>> 155G1S06X 1550 nm
5 W Other
>> HI155G1S04FP-10/22-F-0-01 1550 nm
5 W Pigtail or Receptacle
>> HI155G1S04FP-10/22-L-0-01 1550 nm
7 W Pigtail or Receptacle
>> HI155G1S02x 1550 nm
8 W Other
>> 155G2S06X 1550 nm
10 W Other
>> HI155G1S04SCX 1550 nm
10 W Other
>> 155G1S14X 1550 nm
12 W Other
>> HI155G1S04x 1550 nm
16 W Other
>> HI155G1S07SCX 1550 nm
18 W Other
>> HI155G1S07x 1550 nm
20 W Other
>> HI155G1S14SCX 1550 nm
30 W Other
>> HI155G1S14x 1550 nm
30 W Other
>> 155G4S14X 1550 nm
40 W Other

Your contact person

Winfried Reeb

+49 (0) 8142 2864-42

w.reeb@lasercomponents.com

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