28.10.2025

YAG enhanced photon trapping silicon avalanche photodiode

Arshey Patadia

LASER COMPONENTS Detector Group

Title of Presentation:
YAG enhanced photon trapping silicon avalanche photodiode for high gain and low noise operation

19 January 2025 • 2:15 PM - 2:35 PM PST
Oral Presentation

Abstract - YAG enhanced photon trapping silicon avalanche photodiode

We present the design and characterization of an improved YAG enhanced Silicon Avalanche Photodiode that is able to operate at high gain with low overall noise. The RAPD with active photon traps exhibits high Quantum Efficiency at 1064nm wavelength and a low capacitance.

Avalanche Photodiodes

manufactured by LASER COMPONENTS

Si APDs are suitable for the spectral range from 260 nm to 1100 nm.

Silicon avalanche photodiodes are used in the wavelength range from the UV to the near infrared. LASER COMPONENTS manufactures different series: highest quality for demanding systems, over customized version to components made for consumer products. Quick selection! Click here to find the detector you need and check its data sheet. Detector Selector

SAT3000E1 Avalanche Photodiodes at 1064 nm

Nd:YAG Enhanced APDs

APD with excellent quantum efficiency made for photon counting.

The SAP-series silicon avalanche photodiodes are primarily used in photon counting. This series features highest efficiency and lowest dark current rates.

These APDs have a high sensitivity in the DUV/UV wavelength range.

The detector was developed specifically for (bio)medical applications in which the smallest signals in the short-wave UV/blue spectral range have to be detected.

APD-arrays are now available from LASER COMPONENTS, enabling new applications in LIDAR and ACC.

Best efficiency thanks to excellent signal-to-noise ratio.

The IAG series avalanche photodiodes feature a particularly good signal-to-noise ratio and support an amplification of more than 30. The inexpensive IAL series is made for consumer products.